Simulation Study of Low Turn-Off Loss and Snapback-Free SA-IGBT with Injection-Enhanced p-Floating Layer

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P+ anode region, which would not degrade th...

IGBT modules robustness during turn-off commutation

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different dr...

TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition

simulation and experimental studies for prediction mineral scale formation in oil field during mixing of injection and formation water

abstract: mineral scaling in oil and gas production equipment is one of the most important problem that occurs while water injection and it has been recognized to be a major operational problem. the incompatibility between injected and formation waters may result in inorganic scale precipitation in the equipment and reservoir and then reduction of oil production rate and water injection rate. ...

Design and simulation of a RF MEMS shunt capacitive switch with low actuation voltage, low loss and high isolation

According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...